Effect of interfacial AsH3 surge treatment on GaInP/GaAs dual-junction solar cells grown by metal-organic vapor phase epitaxy

被引：1

作者：

Kang, Seokjin ^{[1
,2
]}

Choi, Hee Ju ^{[3
]}

Kang, Eun Kyu ^{[4
]}

Ju, Gun Wu ^{[1
]}

Min, Jung-Wook ^{[3
]}

Lee, Yong Tak ^{[1
]}

Lee, Dong-Seon ^{[1
]}

Park, Kwangwook ^{[5
,6
]}

Kim, Hyo Jin ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Elect Engn & Comp Sci, Gwangju 61005, South Korea

[2] Korea Photon Technol Inst, Photon Energy Res Ctr, Gwangju 61007, South Korea

[3] Gwangju Inst Sci & Technol, Dept Phys & Photon Sci, Gwangju 61005, South Korea

[4] Elect & Telecommun Res Inst, Honam Res Ctr, Opt Packaging Res Sect, Gwangju 61012, South Korea

[5] Natl Renewable Energy Lab, Golden, CO 80401 USA

[6] Korea Adv Nano Fab Ctr, Suwon 16229, Gyeonggi Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

QUANTUM DOTS; GAAS; HETEROINTERFACE; ALXGA1-XAS; MECHANISM; STRAIN; INGAP;

D O I：

10.7567/JJAP.57.080311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of a modified PH3-to-AsH3 gas switching sequence with an AsH3 surge treatment on GaInP/GaAs dual-junction solar cells was studied. With AsH3 surge treatment, both the material quality with an absence of defects and device performance was preserved, but without it, deterioration in both of these characteristics was observed, which originated in the As/P interface. It was found that defects with an inhomogeneous III-metal composition were formed at the interface and developed into a V-shaped dislocation which penetrated the GaInP top cell. The results suggest that sufficient arsenic supply is necessary prior to As-based material growth on GaInP. (C) 2018 The Japan Society of Applied Physics

引用

页数：5

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