Through silicon via based metal-semiconductor-metal photodetector in CMOS technology

This paper proposes a novel implementation of a metal-semiconductor-metal (MSM) photodetector (PD) in 180 nm Complementary Metal Oxide Semiconductor (CMOS) technology. The new design uses through silicon via metal layers, introduced in modern deep submicron CMOS technologies, as an electrode of MSM PD in order to expand the space charge region of the Schottky junction. A minimum Internal Quantum Efficiency of 98.24 % in the range of 300 nm (UV) to 1000 nm (NIR) input light at 3 V bias is achieved according to numerical simulations. The new PD shows a dark current of 83.8 fA and the 3-dB bandwidth of 41.4 GHz, at the same bias. The maximum crosstalk noise for two different types of proposed PDs is 57.73 and 0.37 %.