The interface roughness exponent in GexSi1-x/Si superlattices

被引：8

作者：

Cui, SF ^{[1
]}

Luo, GM ^{[1
]}

Li, M ^{[1
]}

Mai, ZH ^{[1
]}

Cui, Q ^{[1
]}

Zhou, JM ^{[1
]}

Jiang, XM ^{[1
]}

Zhang, WL ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST HIGH ENERGY PHYS,BEIJING 100039,PEOPLES R CHINA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 14期

关键词：

D O I：

10.1088/0953-8984/9/14/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interface roughness and scaling exponent of GexSi1-x/Si strained-layer superlattices (SLSs) grown by molecular beam epitaxy (MBE) have been measured by x-ray reflectivity and diffuse-scattering methods. We have found that for samples grown under identical conditions the root mean square (rms) roughnesses (sigma), the roughness exponents (h), and the lateral correlation length (xi) are dependent upon the thickness and/or the substrate temperatures of the superlattice. The incorporation of a surfactant, such as antimony, can retard interface widening and smooth the interface.

引用

页码：2891 / 2902

页数：12

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