Resonance effects in thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi2Se3

被引：17

作者：

Kim, Sung ^{[1
,2
]}

Shin, Dong Hee ^{[1
,2
]}

Kim, Ju Hwan ^{[1
,2
]}

Jang, Chan Wook ^{[1
,2
]}

Park, Jun Woo ^{[1
,2
]}

Lee, Hosun ^{[1
,2
]}

Choi, Suk-Ho ^{[1
,2
]}

Kim, Seung Hyun ^{[3
]}

Yee, Ki-Ju ^{[3
]}

Bansal, Namrata ^{[4
]}

Oh, Seongshik ^{[5
]}

机构：

[1] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, South Korea

[2] Kyung Hee Univ, Inst Nat Sci, Yongin 446701, South Korea

[3] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[4] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[5] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

topological insulator; Bi2Se3; pump-probe; differential reflectivity; resonance; OPTICAL-PROPERTIES; TRANSPORT; QUANTUM;

D O I：

10.1088/0957-4484/27/4/045705

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resonance effects in the thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi2Se3 are found irrespective of the kind of substrate by measuring thickness-dependent abrupt changes of pump-probe differential-reflectivity signals (Delta R/R) from Bi2Se3 thin films on four different substrates of poly-and single-crystalline (sc-) ZnO, sc-GaN and SiO2. The absolute peak intensity of the Delta R/R is maximized at similar to t(C) (6 similar to 9 quintuple layers), which is not directly related to but is very close to the critical thickness below which the energy gap opens. The intensities of the two phonon modes deduced from the oscillatory behaviors superimposed on the Delta R/R profiles are also peaked at similar to t(C) for the four kinds of substrates, consistent with the thickness-dependent Raman-scattering behaviors. These resonant effects and others are discussed based on possible physical mechanisms including the effects of three-dimensional carrier depletion and intersurface coupling.

引用

页数：9

共 36 条

[1] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements [J].

Analytis, James G. ;

Chu, Jiun-Haw ;

Chen, Yulin ;

Corredor, Felipe ;

McDonald, Ross D. ;

Shen, Z. X. ;

Fisher, Ian R. .

PHYSICAL REVIEW B, 2010, 81 (20)

[2] Structural, electrical and optical properties of Bi2Se3 and Bi2Se(3-x)Tex thin films [J].

Augustine, S ;

Ampili, S ;

Kang, JK ;

Mathai, E .

MATERIALS RESEARCH BULLETIN, 2005, 40 (08) :1314-1325

[3] Thickness-Independent Transport Channels in Topological Insulator Bi2Se3 Thin Films [J].

Bansal, Namrata ;

Kim, Yong Seung ;

Brahlek, Matthew ;

Edrey, Eliav ;

Oh, Seongshik .

PHYSICAL REVIEW LETTERS, 2012, 109 (11)

[4] Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface [J].

Bansal, Namrata ;

Kim, Yong Seung ;

Edrey, Eliav ;

Brahlek, Matthew ;

Horibe, Yoichi ;

IidaD, Keiko ;

Tanimura, Makoto ;

Li, Guo-Hong ;

Feng, Tian ;

Lee, Hang-Dong ;

Gustafsson, Torgny ;

Andrei, Eva Y. ;

Oh, Seongshik .

THIN SOLID FILMS, 2011, 520 (01) :224-229

[5] Optical detection of folded mini-zone-edge coherent acoustic modes in a doped GaAs/AlAs superlattice [J].

Beardsley, R. ;

Akimov, A. V. ;

Glavin, B. A. ;

Maryam, W. ;

Henini, M. ;

Kent, A. J. .

PHYSICAL REVIEW B, 2010, 82 (04)

[6] Emergence of Decoupled Surface Transport Channels in Bulk Insulating Bi2Se3 Thin Films [J].

Brahlek, Matthew ;

Koirala, Nikesh ;

Salehi, Maryam ;

Bansal, Namrata ;

Oh, Seongshik .

PHYSICAL REVIEW LETTERS, 2014, 113 (02)

[7] Subharmonic Resonant Optical Excitation of Confined Acoustic Modes in a Free-Standing Semiconductor Membrane at GHz Frequencies with a High-Repetition-Rate Femtosecond Laser [J].

Bruchhausen, A. ;

Gebs, R. ;

Hudert, F. ;

Issenmann, D. ;

Klatt, G. ;

Bartels, A. ;

Schecker, O. ;

Waitz, R. ;

Erbe, A. ;

Scheer, E. ;

Huntzinger, J. -R. ;

Mlayah, A. ;

Dekorsy, T. .

PHYSICAL REVIEW LETTERS, 2011, 106 (07)

[8] MECHANISM FOR DISPLACIVE EXCITATION OF COHERENT PHONONS IN SB, BI, TE, AND TI2O3 [J].

CHENG, TK ;

VIDAL, J ;

ZEIGER, HJ ;

DRESSELHAUS, G ;

DRESSELHAUS, MS ;

IPPEN, EP .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :1923-1925

[9] Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells [J].

Chern, GW ;

Lin, KH ;

Huang, YK ;

Sun, CK .

PHYSICAL REVIEW B, 2003, 67 (12) :4

[10] Topological insulators in three dimensions [J].

Fu, Liang ;

Kane, C. L. ;

Mele, E. J. .

PHYSICAL REVIEW LETTERS, 2007, 98 (10)

← 1 2 3 4 →