Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

被引：42

作者：

Chiang, Jung-Lung ^{[1
]}

Jhan, Syun-Sheng ^{[2
]}

Hsieh, Shu-Chen ^{[3
]}

Huang, An-Li ^{[3
]}

机构：

[1] Chung Chou Inst Technol, Dept Elect Engn, Yuanlin 51003, Changhua, Taiwan

[2] Ling Tung Univ, Dept Informat Management, Taichung 40852, Taiwan

[3] Chung Chou Inst Technol, Grad Sch Engn Technol, Yuanlin 51003, Changhua, Taiwan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 17期

关键词：

ITO; EGFET; pH sensitivity; Sputtering system; FIELD-EFFECT TRANSISTOR; ELECTRODE; GLASS;

D O I：

10.1016/j.tsf.2009.03.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) thin films were deposited onto Si and SiO2/Si substrates using a radio frequency sputtering system with a grain size of 30-50 nm and thickness of 270-280 rum. ITO/Si and ITO/SiO2/Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO pH-EGFET). The semiconductor parameter analysis measurement (Keithley 4200) was utilized to measure the current-voltage (I-V) characteristics curves and study the sensing properties of the ITO pH-EGFET. The linear pH voltage sensitivities were about 41.43 and 43.04 mV/pH for the ITO/Si and ITO/SiO2/Si sensing structures, respectively. At the same time, both pH current sensitivities were about 49.86 and 51.73 mu A/pH, respectively. Consequently, both sensing structures can be applied as extended-gate sensing heads. The separative structure is suitable for application as a disposable pH sensor. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4805 / 4809

页数：5

共 18 条

[11] Step coverage study of indium-tin-oxide thin films by spray CVD on non-flat substrates at different temperatures [J].

Kondo, T. ;

Sawada, Y. ;

Akiyama, K. ;

Funakubo, H. ;

Kiguchi, T. ;

Seki, S. ;

Wang, M. H. ;

Uchida, T. .

THIN SOLID FILMS, 2008, 516 (17) :5864-5867

[12] Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application [J].

Lee, BH ;

Kim, IG ;

Cho, SW ;

Lee, SH .

THIN SOLID FILMS, 1997, 302 (1-2) :25-30

[13] Using the Photolysis of Chemically Modified Gel Films Preparing ITO Fine Patterned Thin Films [J].

Li, Ying ;

Zhao, Gaoyang ;

Zhang, Weihua ;

Chen, Yuanqing .

JOURNAL OF DISPLAY TECHNOLOGY, 2006, 2 (02) :175-179

[14] ITO thin films prepared by a microwave heating [J].

Okuya, Masayuki ;

Ito, Nobuyuki ;

Shiozaki, Katsuyuki .

THIN SOLID FILMS, 2007, 515 (24) :8656-8659

[15]

SPIEGEL JVD, 1983, SENSOR ACTUATOR, V4, P291

[16] Investigation of the properties of indiurn tin oxide-organic contacts for optoelectronic applications [J].

Stanculescu, A. ;

Stanculescu, F. .

THIN SOLID FILMS, 2007, 515 (24) :8733-8737

[17] ITO thin films deposited by advanced pulsed laser deposition [J].

Viespe, Cristian ;

Nicolae, Ionut ;

Sima, Comelia ;

Grigorlu, Constantin ;

Medianu, Rares .

THIN SOLID FILMS, 2007, 515 (24) :8771-8775

[18] Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate [J].

Yin, LT ;

Chou, JC ;

Chung, WY ;

Sun, TP ;

Hsiung, SK .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 71 (1-2) :106-111

← 1 2 →