Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

被引：42

作者：

Chiang, Jung-Lung ^{[1
]}

Jhan, Syun-Sheng ^{[2
]}

Hsieh, Shu-Chen ^{[3
]}

Huang, An-Li ^{[3
]}

机构：

[1] Chung Chou Inst Technol, Dept Elect Engn, Yuanlin 51003, Changhua, Taiwan

[2] Ling Tung Univ, Dept Informat Management, Taichung 40852, Taiwan

[3] Chung Chou Inst Technol, Grad Sch Engn Technol, Yuanlin 51003, Changhua, Taiwan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 17期

关键词：

ITO; EGFET; pH sensitivity; Sputtering system; FIELD-EFFECT TRANSISTOR; ELECTRODE; GLASS;

D O I：

10.1016/j.tsf.2009.03.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) thin films were deposited onto Si and SiO2/Si substrates using a radio frequency sputtering system with a grain size of 30-50 nm and thickness of 270-280 rum. ITO/Si and ITO/SiO2/Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO pH-EGFET). The semiconductor parameter analysis measurement (Keithley 4200) was utilized to measure the current-voltage (I-V) characteristics curves and study the sensing properties of the ITO pH-EGFET. The linear pH voltage sensitivities were about 41.43 and 43.04 mV/pH for the ITO/Si and ITO/SiO2/Si sensing structures, respectively. At the same time, both pH current sensitivities were about 49.86 and 51.73 mu A/pH, respectively. Consequently, both sensing structures can be applied as extended-gate sensing heads. The separative structure is suitable for application as a disposable pH sensor. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4805 / 4809

页数：5

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