Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

被引：12
作者：
Sivasubramani, P. [1 ]
Kim, J. [1 ]
Kim, M. J. [1 ]
Gnade, B. E. [1 ]
Wallace, R. M. [1 ]
机构：
[1] Univ Texas, Richardson, TX 75080 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
关键词：
D O I：
10.1063/1.2361170
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thermal stability of sputter deposited LaAlOx and lanthanum aluminum oxynitride (LaAlON) dielectrics on top of Si (100) was evaluated after 1000 degrees C rapid thermal annealing (RTA). A nitrogen concentration of similar to 3 at. % in the bulk LaAlON film was found to suppress crystallization as well as metal (lanthanum and aluminum) outdiffusion into the Si (100) substrate after the RTA treatment. These results suggest that film microstructure should be carefully controlled to inhibit impurity diffusion in the conventional gate stack fabrication process. (c) 2006 American Institute of Physics.
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页数：3
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