Hydrogen plasma etching mechanism on (001) diamond

被引：24

作者：

Ri, Sung-Gi ^{[1
]}

Watanabe, Hideyuki ^{[1
]}

Ogura, Masahiko ^{[1
]}

Takeuchi, Daisuke ^{[1
]}

Yamasaki, Satoshi ^{[1
]}

Okushi, Hideyo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 293卷 / 02期

关键词：

atomic force microscopy; etching; low CH4/H ratio growth; misorientation angle; chemical vapor deposition processes; diamond;

D O I：

10.1016/j.jcrysgro.2006.05.036

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the hydrogen plasma etching mechanism on (001) diamond surfaces as a parameter of misorientation angle (theta(off)). After hydrogen plasma etching, for theta(off) < 1.5 degrees, atomically flat surfaces were observed by atomic force microscopy, while for theta(off) > 1.5 degrees, rough surfaces with high etch pit density and large (200 nm) periodic pattern due to mechanical polishing were observed on diamond substrates. In addition, mean roughness (R-a) increased with the increase in theta(off). A simple model is presented taking into account anisotropic etching depending on theta(off). Simulated results based on the model well explain the experimental results. Based on these results, we discuss the effect of hydrogen plasma etching on the growth of atomically flat homoepitaxial chemical vapor deposition diamond film at low CH4/H-2 ratio with low theta(off). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：311 / 317

页数：7

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