Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors

被引:370
作者
Island, J. O. [1 ]
Blanter, S. I. [1 ]
Buscema, M. [1 ]
van der Zant, H. S. J. [1 ]
Castellanos-Gomez, A. [1 ,2 ]
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] Inst Madrileno Estudios Avanzados Nanociencia IMD, E-28049 Madrid, Spain
关键词
In2Se3; indium selenide; FET; photodetector; mechanism; high gain; FIELD-EFFECT TRANSISTORS; PHOTODETECTORS; LAYER; PHOTORESPONSE; PERFORMANCE; ULTRAVIOLET; TRANSITION; FILMS;
D O I
10.1021/acs.nanolett.5b02523
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes, which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, because of the strong photogating effect, these direct-band gap, multilayer phototransistors produce ultrahigh gains of (9.8 +/- 2.5) x 10(4) A/W and inferred detectivities of (3.3 +/- 0.8) X 10(13) Jones, putting In2Se3 among the most sensitive 2D materials for photodetection studied to date.
引用
收藏
页码:7853 / 7858
页数:6
相关论文
共 40 条
[1]   High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors [J].
Abderrahmane, A. ;
Ko, P. J. ;
Thu, T. V. ;
Ishizawa, S. ;
Takamura, T. ;
Sandhu, A. .
NANOTECHNOLOGY, 2014, 25 (36)
[2]   Thin film MoS2 nanocrystal based ultraviolet photodetector [J].
Alkis, S. ;
Oztas, T. ;
Aygun, L. E. ;
Bozkurt, F. ;
Okyay, A. K. ;
Ortac, B. .
OPTICS EXPRESS, 2012, 20 (19) :21815-21820
[3]  
[Anonymous], 2012, Adv. Mater
[4]   Photocurrent generation with two-dimensional van der Waals semiconductors [J].
Buscema, Michele ;
Island, Joshua O. ;
Groenendijk, Dirk J. ;
Blanter, Sofya I. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
CHEMICAL SOCIETY REVIEWS, 2015, 44 (11) :3691-3718
[5]   Large and Tunable Photothermoelectric Effect in Single-Layer MoS2 [J].
Buscema, Michele ;
Barkelid, Maria ;
Zwiller, Val ;
van der Zant, Herre S. J. ;
Steele, Gary A. ;
Castellanos-Gomez, Andres .
NANO LETTERS, 2013, 13 (02) :358-363
[6]   Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping [J].
Castellanos-Gomez, Andres ;
Buscema, Michele ;
Molenaar, Rianda ;
Singh, Vibhor ;
Janssen, Laurens ;
van der Zant, Herre S. J. ;
Steele, Gary A. .
2D MATERIALS, 2014, 1 (01)
[7]   High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared [J].
Choi, Woong ;
Cho, Mi Yeon ;
Konar, Aniruddha ;
Lee, Jong Hak ;
Cha, Gi-Beom ;
Hong, Soon Cheol ;
Kim, Sangsig ;
Kim, Jeongyong ;
Jena, Debdeep ;
Joo, Jinsoo ;
Kim, Sunkook .
ADVANCED MATERIALS, 2012, 24 (43) :5832-5836
[8]   High thermoelectric performance of a defect in α-In2Se3-based solid solution upon substitution of Zn for In [J].
Cui, Jiaolin ;
Wang, Li ;
Du, Zhengliang ;
Ying, Pengzhan ;
Deng, Yuan .
JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (35) :9069-9075
[9]  
Furchi MM, 2014, NANO LETT, V14, P6165, DOI [10.1021/nl502339q, 10.1021/n1502339q]
[10]   Room-Temperature Photodetection Dynamics of Single GaN Nanowires [J].
Gonzalez-Posada, F. ;
Songmuang, R. ;
Den Hertog, M. ;
Monroy, E. .
NANO LETTERS, 2012, 12 (01) :172-176