Germanium/Silicon Heterostructures for Terahertz Emission

被引：4

作者：

Kelsall, R. W. ^{[1
]}

Dinh, V. T. ^{[1
]}

Ivanov, P. ^{[1
]}

Valavanis, A. ^{[1
]}

Lever, L. J. M. ^{[1
]}

Ikonic, Z. ^{[1
]}

Velha, P. ^{[2
]}

Dumas, D. ^{[2
]}

Gallacher, K. F. ^{[2
]}

Paul, D. J. ^{[2
]}

Halpin, J. ^{[3
]}

Myronov, M. ^{[3
]}

Leadley, D. R. ^{[3
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Leeds, W Yorkshire, England

[2] Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, West Midlands, England

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

INTERSUBBAND ELECTROLUMINESCENCE; CASCADE;

D O I：

10.1149/05009.0763ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Progress towards Si/Ge terahertz quantum cascade lasers is reviewed, and the relative merits of different Si/Ge materials configurations for such lasers are compared. The prospects for Ge-based quantum cascade lasers are discussed, and supported by simulation work for realistic laser designs. Experimental progress and challenges are assessed.

引用

页码：763 / 771

页数：9

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