Material Properties of GaN Films Grown on SiC/SOI Substrate

被引：0
|
作者：
Feng, Z. C. [1 ]
Tran, C. [2 ]
Ferguson, I. T. [3 ]
Zhao, J. H. [4 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] SemiLEDs Corp, Atlanta, GA 83702 USA
[3] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA
[4] Rutgers State Univ, SiCLAB, DEp ECE, Piscataway, NJ 08855 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
GaN; 3C-SiC; SOI; MOCVD; XRD; photoluminescence; Raman scattering; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; SI;
D O I：
10.4028/www.scientific.net/MSF.600-603.1313
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photo luminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.
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收藏
页码：1313 / +
页数：2
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