Study of the Radiation Hardness of Silicon Sensors for the XFEL

被引：0
|
作者：
Fretwurst, E. [1 ]
Januschek, F. [1 ]
Klanner, R. [1 ]
Perrey, H. [1 ]
Pintilie, I. [2 ]
Renn, F. [3 ]
机构：
[1] Univ Hamburg, Inst Expt Phys, Hamburg, Germany
[2] Natl Inst Mat Phys, Bucharest, Romania
[3] Heidelberg Univ, DESY, D-69115 Heidelberg, Germany
来源：
2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9 | 2009年
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D O I：
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中图分类号：
R8 [特种医学]; R445 [影像诊断学];
学科分类号：
1002 ; 100207 ; 1009 ;
摘要：
Imaging experiments at the XFEL pose unprecedented requirements to the detectors in terms of radiation tolerance: Fluxes of up to 10(16) (12 keVphotons/cm(2)) corresponding to approximately 10(9) Gy in silicon, are expected. An irradiation station has been set up in the DORIS beam line F4, MOS test structures have been irradiated, and first results on the dose dependence of the CN-characteristics, surface current density, and interface trap density have been obtained.
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页码：1810 / +
页数：2
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