Carrier Systems for Collective Die-to-Wafer Bonding

被引:10
作者
Kennes, Koen [1 ]
Phommahaxay, Alain [1 ]
Guerrero, Alice [2 ]
Suhard, Samuel [1 ]
Bex, Pieter [1 ]
Brems, Steven [1 ]
Liu, Xiao [2 ]
Tussing, Sebastian [3 ]
Beyer, Gerald [1 ]
Beyne, Eric [1 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Brewer Sci Inc, 2401 Brewer Dr, Rolla, MO 65401 USA
[3] SUSS MicroTec Lithog GmbH, Ferdinand von Steinbeis Ring 10, D-75447 Sternenfels, Germany
来源
IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022) | 2022年
关键词
Heterogeneous integration; wafer bonder; dielectric bonding; hybrid bonding; die-to-waftr bonding; temporary bonding material; laser release material; laser debonding; collective hybrid bonding;
D O I
10.1109/ECTC51906.2022.00324
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Several alternative carrier systems for collective die-to-wafer transfer, using the laser debonding technique, are evaluated. The principles of laser debonding are explained and applied to thin die transfer. A so called 'acoustic' layer needs to be present to avoid damage to the dies during the laser ablation process. The benefits and disadvantages of applying this layer to the glass carrier system rather than to the dies prior to singulation are explained. Three alternative carrier systems, based on BrewerBOND (R) C1301-50 material and BrewerBOND (R) T1107 release material, are designed and evaluated for die placement, protective layer strip, collective bonding and finally laser debonding. A quantitative analysis and comparison with a reference system containing the release layer and acoustic layer on the die prior to singulation is presented.
引用
收藏
页码:2058 / 2063
页数:6
相关论文
共 13 条
  • [1] Di Cioccio G. L., 2009, 2009 IEEE INT C 3D S, P1
  • [2] Gao G., 2018, P INT WAFER LEVEL PA, P1, DOI DOI 10.23919/IWLPC.2018.8573278
  • [3] Scaling Package Interconnects Below 20μm Pitch with Hybrid Bonding
    Gao, Guilian
    Mirkarimi, Laura
    Fountain, Gill
    Wang, Liang
    Uzoh, Cyprian
    Workman, Thomas
    Guevara, Gabe
    Mandalapu, Chandrasekhar
    Lee, Bongsub
    Katkar, Rajesh
    [J]. 2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018), 2018, : 314 - 322
  • [4] Kennes K, 2021 IEEE 71TH ELECT, P2126
  • [5] Kennes K., 2020 CHIP SCALE REV
  • [6] Introduction of a New Carrier System for Collective Die-to-Wafer Hybrid Bonding and Laser-Assisted Die Transfer
    Kennes, Koen
    Phommahaxay, Alain
    Guerrero, Alice
    Bauder, Olga
    Suhard, Samuel
    Bex, Pieter
    Iacovo, Serena
    Liu, Xiao
    Schmidt, Thomas
    Beyer, Gerald
    Beyne, Eric
    [J]. 2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020), 2020, : 296 - 302
  • [7] First Integration of Cu TSV Using Die-to-Wafer Direct Bonding and Planarization
    Leduc, Patrick
    Assous, Myriam
    Di Cioccio, Lea
    Zussy, Marc
    Signamarcheix, Thomas
    Roman, Antonio
    Rousseau, Maxime
    Verrun, Sophie
    Bally, Laurent
    Bouchu, David
    Cadix, Lionel
    Farcy, Alexis
    Sillon, Nicolas
    [J]. 2009 IEEE INTERNATIONAL CONFERENCE ON 3D SYSTEMS INTEGRATION, 2009, : 1 - +
  • [8] Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems
    Phommahaxay, Alain
    Suhard, Samuel
    Bex, Pieter
    Iacovo, Serena
    Slabbekoorn, John
    Inoue, Fumihiro
    Peng, Lan
    Kennes, Koen
    Sleeckx, Erik
    Beyer, Gerald
    Beyne, Eric
    [J]. 2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 607 - 613
  • [9] Podpod A., 2018, 2018 INT WAF LEV PAC, P1
  • [10] Sanchez L, 2012, 2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), P1960, DOI 10.1109/ECTC.2012.6249108