Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 μm

被引：0
作者：
Frassanito, M. C.
De Giorgi, M.
Rinaldi, R.
Cingolani, R.
Rubini, S.
Piccin, M.
Cristofoli, A.
Bais, G.
Martelli, F.
Carlino, E.
Franciosi, A.
机构：
[1] CNR, INFM, Natl Nanotechnol Lab, I-73100 Lecce, Italy
[2] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[3] Univ Trieste, Ctr Excellence Nanostructured Mat, I-34127 Trieste, Italy
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 08期
关键词：
BAND-GAP; CARRIER LOCALIZATION; ORIGIN;
D O I：
10.1088/0268-1242/21/8/038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microphotoluminescence studies of annealed In( x) Ga( 1 - x) N( y) As( 1 - y)/ GaAs quantum wells fabricated by molecular beam epitaxy for optical emission in the 1.3 mu m spectral range revealed several sharp peaks about 2 - 7 meV wide in the emission spectra. The intensity of the discrete lines decreased strongly with increasing lattice temperature and was absent in as-grown ( unannealed) quantum wells. Such quantum dot-like emission lines are attributed to the recombination of excitons strongly localized at alloy fluctuations composed of In-N-rich clusters.
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页码：1207 / 1211
页数：5
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