Spin-polarized tunneling between ferromagnetic films

被引：34

作者：

Gu, RY ^{[1
]}

Xing, DY ^{[1
]}

Dong, JM ^{[1
]}

机构：

[1] NANJING UNIV, DEPT PHYS, NANJING 210093, PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.363740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data. (C) 1996 American Institute of Physics.

引用

页码：7163 / 7165

页数：3

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