Accurate methods for study of light emission from quantum wells confined in a microcavity

被引：6
作者：
Constant, SB [1 ]
Hosea, TJC
Toikkanen, L
Hirvonen, I
Pessa, MV
机构：
[1] Univ Surrey, Dept Phys, Surrey GU2 7XH, England
[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2002年 / 38卷 / 08期
基金：
英国工程与自然科学研究理事会; 芬兰科学院;
关键词：
distributed Bragg reflector diodes; microcavities; photomodulated reflectance; resonant-cavity light emitting diodes;
D O I：
10.1109/JQE.2002.801004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photomodulated reflectance (PR) and conventional reflectance studies have been performed on an InGaP/AlGaInP/Alx1Gay1As/Alx2Gay2As resonant-cavity light emitting diode structure in the red spectral region. The PR spectra show prominent signals from the Fabry-Perot cavity mode and the quantum-well (QW) ground state excitonic transition. This high-precision technique, and its variations as functions of incidence angle and temperature, as reported in this article, allow one to investigate light emission from the QW confined in a microcavity with relation to the Fabry-Perot mode, and is the only known nonconductive, nondestructive method of doing so.
引用
收藏
页码：1031 / 1038
页数：8
相关论文
共 23 条
[1]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[2]   Impact of planar microcavity effects on light extraction - Part I: Basic concepts and analytical trends [J].
Benisty, H ;
De Neve, H ;
Weisbuch, C .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1612-1631
[3]  
BERGER EP, 1996, APPL PHYS LETT, V66, P4
[4]   Resonances between the cavity mode and five excitonic transitions in an InxGa1-xAs/GaAs/AlAs/AlGaAs vertical-cavity surface-emitting laser structure using photomodulated reflectance [J].
Choulis, SA ;
Ghosh, S ;
Hosea, TJC .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5547-5553
[5]   Nondestructive spectroscopic characterisation of visible resonant cavity light emitting diode structures [J].
Constant, SB ;
Ghosh, S ;
Sale, TE ;
Hosea, TJC .
IEE PROCEEDINGS-OPTOELECTRONICS, 2001, 148 (01) :69-73
[6]   Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser structures [J].
Ghosh, S ;
Constant, S ;
Hosea, TJC ;
Sale, TE .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) :1432-1438
[7]   Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium-tin-oxide coated electrodes [J].
Ghosh, S ;
Hosea, TJC .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (04) :1911-1912
[8]   Photoreflectance line shape symmetry and quantum-well ground-state exciton energy in vertical-cavity surface-emitting laser structures [J].
Ghosh, S ;
Hosea, TJC ;
Constant, SB .
APPLIED PHYSICS LETTERS, 2001, 78 (21) :3250-3252
[9]   Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth [J].
Guina, M ;
Orsila, S ;
Dumitrescu, M ;
Saarinen, M ;
Sipilä, P ;
Vilokkinen, V ;
Roycroft, B ;
Uusimaa, P ;
Toivonen, M ;
Pessa, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (07) :786-788
[10]   ESTIMATING CRITICAL-POINT PARAMETERS FROM KRAMERS-KRONIG TRANSFORMATIONS OF MODULATED REFLECTANCE SPECTRA [J].
HOSEA, TJC .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 182 (01) :K43-K47
123