Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC

被引：349

作者：

Davydov, VY ^{[1
]}

Averkiev, NS ^{[1
]}

Goncharuk, IN ^{[1
]}

Nelson, DK ^{[1
]}

Nikitina, IP ^{[1
]}

Polkovnikov, AS ^{[1
]}

Smirnov, AN ^{[1
]}

Jacobsen, MA ^{[1
]}

Semchinova, OK ^{[1
]}

机构：

[1] UNIV HANNOVER,LFI,D-30167 HANNOVER,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 10期

关键词：

D O I：

10.1063/1.366310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of biaxial strain on optical phonons in high-quality GaN epitaxial layers grown on 6H-SiC substrates by metal organic chemical vapor deposition has been studied. The deformation potential constants for the E-2((1)), A(1)(TO), E-1(TO), and E-2((2)) optical phonon modes in hexagonal GaN have been obtained. A method for calculating strain in hexagonal GaN layers from Raman data alone is suggested. A comparative analysis of the strain measured by x-ray diffraction and Raman spectroscopy shows that these data agree well. It is found that the biaxial stress of 1 GPa results in a shift of the excitonic photoluminescence lines of 20 +/- 3 meV. (C) 1997 American Institute of Physics.

引用

页码：5097 / 5102

页数：6

共 24 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].