Properties of InGaAlAs/AlGaAs quantum dots for single photon emission in the near infrared and visible spectral range

被引：0

作者：

Dusanowski, L. ^{[1
]}

Golnik, A. ^{[2
]}

Syperek, M. ^{[1
]}

Suffczynski, J. ^{[2
]}

Nawrocki, M. ^{[2
]}

Sek, G. ^{[1
]}

Misiewicz, J. ^{[1
]}

Schlereth, T. W. ^{[3
]}

Schneider, C. ^{[3
]}

Hoefling, S. ^{[3
]}

Kamp, M. ^{[3
]}

Forchel, A. ^{[3
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

[2] Wroclaw Univ Technol, Fac Phys, PL-00618 Wroclaw, Poland

[3] Univ Wurzburg, Dept Tech Phys, D-97074 Wurzburg, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

quantum dots; III-V semiconductors; InAlGaAs/GaAs; microphotolumienscence; photon correlation;

D O I：

10.1063/1.4848524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out a detailed characterization of individual self-assembled InGaAlAs/AlGaAs quantum dots grown on GaAs substrate and emitting in the 680-780 nm spectral range. Exciton, biexciton and charged exciton emission lines originating from the same quantum dot have been identified, and the biexciton and charged exciton binding energies have been derived to be equal similar to 5 and similar to 9 meV, respectively. The second-order photon correlation experiments allowed us to show a clear antibunching for exciton emission with a value of g((2))(0) = 0.04 +/- 0.02, confirming distinctly that such GaAs-based quantum dots can be considered as single photon quantum emitters in the abovementioned wavelength range.

引用

页码：540 / +

页数：2

共 4 条

[1] Electronic shell structure and carrier dynamics of high aspect ratio InP single quantum dots
Beirne, Gareth J.
Reischle, Matthias
Rossbach, Robert
Schulz, Wolfgang-Michael
Jetter, Michael
Seebeck, Jan
Gartner, Paul
Gies, Christopher
Jahnke, Frank
Michler, Peter
[J]. PHYSICAL REVIEW B, 2007, 75 (19):
[2] Photon antibunching in the fluorescence of individual color centers in diamond
Brouri, R
Beveratos, A
Poizat, JP
Grangier, P
[J]. OPTICS LETTERS, 2000, 25 (17) : 1294 - 1296
[3] A quantum dot single-photon turnstile device
Michler, P
Kiraz, A
Becher, C
Schoenfeld, WV
Petroff, PM
Zhang, LD
Hu, E
Imamoglu, A
[J]. SCIENCE, 2000, 290 (5500) : 2282 - 2285
[4] Low threshold, high gain AlGaInAs quantum dot lasers
Schlereth, T. W.
Schneider, C.
Kaiser, W.
Hoefling, S.
Forchel, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (22)

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