Ion beam synthesis of SiC/Si heterostructures by MEVVA implantation

Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum are) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in over stoichiometrically implanted samples during annealing to form a stoichiometric SIC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to beta-SIC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed.