Growth of well-oriented AlxIn1-xN films by sputtering at low temperature

被引：37

作者：

Dong, C. J. ^{[1
]}

Xu, M. ^{[1
,2
]}

Chen, Q. Y. ^{[1
]}

Liu, F. S. ^{[3
]}

Zhou, H. P. ^{[1
]}

Wei, Y. ^{[1
]}

Ji, H. X. ^{[1
]}

机构：

[1] Sichuan Normal Univ, Inst Solid State Phys, Lab Low Dimens Struct Phys, Chengdu 610068, Peoples R China

[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China

[3] Panzhihua Univ, Res Ctr V Ti Mat, Panzhihua 617000, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 479卷 / 1-2期

关键词：

AlxIn1-xN film; Magnetron sputtering; Crystallinity; Resistance; MOLECULAR-BEAM EPITAXY; FUNDAMENTAL-BAND GAP; VAPOR-PHASE EPITAXY; OPTICAL-PROPERTIES; ENERGY; ALINN; INN; ALN; NANOWIRES; INXAL1-XN;

D O I：

10.1016/j.jallcom.2009.01.075

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

AlxIn1-xN films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the AlxIn1-xN films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E-g) of less than 2.41 eV. The sheet resistance of AlxIn1-xN film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：812 / 815

页数：4

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