Structural and thermoelectric properties of AgSbTe2-AgSbSe2 pseudobinary system

被引：85

作者：

Wojciechowski, K. T. ^{[1
]}

Schmidt, M. ^{[1
]}

机构：

[1] AGH Univ Sci & Technol, Fac Mat Sci & Ceram, PL-30059 Krakow, Poland

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 18期

关键词：

antimony compounds; carrier density; crystal structure; electronic density of states; energy gap; scanning electron microscopy; Seebeck effect; semiconductor doping; semiconductor materials; silver compounds; thermal analysis; thermal conductivity; X-ray diffraction; TRANSPORT-PROPERTIES; HIGH-PRESSURE; AGSBSE2; AGSBTE2; TEMPERATURE;

D O I：

10.1103/PhysRevB.79.184202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural properties of the AgSbTe2-AgSbSe2 pseudobinary system were examined using thermal analysis, scanning electron microscopy, and x-ray powder diffractometry. It was found that partial substitution of Te by Se atoms leads to stabilization of the cubic crystal structure of alloys. The electronic-transport properties of materials were measured in order to investigate carrier conduction, band-gap features, and thermoelectric properties. The undoped homogeneous solid solution exhibits extremely low thermal conductivity of 0.5 W m(-1) K-1, a very large positive Seebeck coefficient of about 400-600 mu V K-1 at room temperature, low carrier densities of 10(16)-10(18) cm(-3), and thermally activated conduction. The influence of alloying on thermal-conductivity mechanisms and electron properties was discussed. The highest experimental dimensionless figure of merit ZT of the undoped AgSbSe0.25Te1.75 sample is about 0.65 at a temperature of 520 K. The influence of doping on enhancement of thermoelectric properties of these materials was analyzed and optimal values of transport parameters were estimated.

引用

页数：7

共 26 条

[1] Electrical conductivity and thermoelectric power of AgSbSe2 in the solid and liquid states [J].

Abdelghany, A ;

Elsayed, SN ;

Abdelwahab, DM ;

ElEla, AHA ;

Mousa, NH .

MATERIALS CHEMISTRY AND PHYSICS, 1996, 44 (03) :277-280

[2]

Armstrong R.W., 1960, J APPL PHYS, V31, P1954, DOI [10.1063/1.1735478, DOI 10.1063/1.1735478]

[3]

BURMEISTER RA, 1964, T METALL SOC AIME, V230, P329

[4]

CHASMAR RP, 1959, J ELECT CONTROL, V7, P1578

[5] Macroscopic thermoelectric inhomogeneities in (AgSbTe2)x(PbTe)1-x -: art. no. 171903 [J].

Chen, N ;

Gascoin, F ;

Snyder, GJ ;

Müller, E ;

Karpinski, G ;

Stiewe, C .

APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3

[6] TERNARY SEMICONDUCTING COMPOUNDS WITH SODIUM CHLORIDE-LIKE STRUCTURE - AGSBSE2, AGSBTE2, AGBIS2, AGBISE2 [J].

GELLER, S ;

WERNICK, JH .

ACTA CRYSTALLOGRAPHICA, 1959, 12 (01) :46-54

[7] Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides [J].

Hoang, Khang ;

Mahanti, S. D. ;

Salvador, James R. ;

Kanatzidis, Mercouri G. .

PHYSICAL REVIEW LETTERS, 2007, 99 (15)

[8] Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit [J].

Hsu, KF ;

Loo, S ;

Guo, F ;

Chen, W ;

Dyck, JS ;

Uher, C ;

Hogan, T ;

Polychroniadis, EK ;

Kanatzidis, MG .

SCIENCE, 2004, 303 (5659) :818-821

[9] Measurements of the energy band gap and valence band structure of AgSbTe2 [J].

Jovovic, V. ;

Heremans, J. P. .

PHYSICAL REVIEW B, 2008, 77 (24)

[10] Synthesis and high pressure studies of the semiconductor AgSbSe2 [J].

Kumar, RS ;

Sekar, A ;

Jaya, NV ;

Natarajan, S .

JOURNAL OF ALLOYS AND COMPOUNDS, 1999, 285 (1-2) :48-50

← 1 2 3 →