Pixel architectures in a HV-CMOS process for the ATLAS inner detector upgrade

被引：6

作者：

Degerli, Y. ^{[1
]}

Godiot, S. ^{[2
]}

Guilloux, F. ^{[1
]}

Hemperek, T. ^{[3
]}

Kruger, H. ^{[3
]}

Lachkar, M. ^{[1
]}

Liu, J. ^{[2
]}

Orsini, F. ^{[1
]}

Pangaud, P. ^{[2
]}

Rymaszewski, P. ^{[3
]}

Wang, T. ^{[3
]}

机构：

[1] CEA Saclay, IRFU, F-91191 Gif Sur Yvette, France

[2] Ctr Phys Particules, 163 Ave Luminy, Marseille, France

[3] Univ Bonn, Inst Phys, Nussallee 12, Bonn, Germany

来源：

JOURNAL OF INSTRUMENTATION | 2016年 / 11卷

关键词：

Particle tracking detectors (Solid-state detectors); Pixelated detectors and associated VLSI electronics; Front-end electronics for detector readout;

D O I：

10.1088/1748-0221/11/12/C12064

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

dIn this paper, design details and simulation results of new pixel architectures designed in LFoundry 150 nm high voltage CMOS process in the framework of the ATLAS high luminosity inner detector upgrade are presented. These pixels can be connected to the FE- I4 readout chip via bump bonding or glue and some of them can also be tested without a readout chip. Negative high voltage is applied to the high resistivity ( > 2 k Omega.cm) substrate in order to deplete the deep n-well charge collection diode, ensuring good charge collection and radiation tolerance. In these pixels, the front- end has been implemented inside the diode using both NMOS and PMOS transistors. The pixel pitch is 50 mu m x 250 mu m for all pixels. These pixels have been implemented in a demonstrator chip called LFCPIX.

引用

页数：11

共 8 条

[1] A Digital Monolithic Active Pixel Sensor Chip in a Quadruple-Well CIS Process for Tracking Applications
Degerli, Y.
Bertolone, G.
Claus, G.
Dorokhov, A.
Dulinski, W.
Goffe, M.
Guilloux, F.
Hu-Guo, Ch
Jaaskelainen, K.
Morel, F.
Orsini, F.
Specht, M.
Winter, M.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (05) : 3899 - 3906
[2] The FE-I4 pixel readout integrated circuit
Garcia-Sciveres, M.
Arutinov, D.
Barbero, M.
Beccherle, R.
Dube, S.
Elledge, D.
Fleury, J.
Fougeron, D.
Gensolen, F.
Gnani, D.
Gromov, V.
Hemperek, T.
Karagounis, M.
Kluit, R.
Kruth, A.
Mekkaoui, A.
Menouni, M.
Schipper, J. -D.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 636 : S155 - S159
[3] CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments
Hirono, Toko
Barbero, Marlon
Breugnon, Patrick
Godiot, Stephanie
Gonella, Laura
Hemperek, Tomasz
Huegging, Fabian
Krueger, Hans
Liu, Jian
Pangaud, Patrick
Peric, Ivan
Pohl, David-Leon
Rozanov, Alexandre
Rymaszewski, Piotr
Wang, Anqing
Wermes, Norbert
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 831 : 94 - 98
[4] Liu J, 2016, WORKS EDUC HIGH PERF, P7, DOI [10.1109/EduHPC.2016.6, 10.1109/EduHPC.2016.006]
[5] Lugiez F., 2013, Google Patents, Patent No. [US 20130257541 A1, 20130257541]
[6] Overview of HVCMOS pixel sensors
Peric, I.
Eber, R.
Ehrler, F.
Augustin, H.
Berger, N.
Dittmeier, S.
Graf, C.
Huth, L.
Perrevoort, A. -K.
Phillipp, R.
Repenning, J.
vom Bruch, D.
Wiedner, D.
Hirono, T.
Benoit, M.
Bilbao, J.
Ristic, B.
Muenstermann, D.
[J]. JOURNAL OF INSTRUMENTATION, 2015, 10
[7] Prototype Active Silicon Sensor in 150 nm HR-CMOS technology for ATLAS Inner Detector Upgrade
Rymaszewski, P.
Barbero, M.
Breugnon, P.
Godiot, S.
Gonella, L.
Hemperek, T.
Hirono, T.
Huegging, F.
Krueger, H.
Liu, J.
Pangaud, P.
Peric, I.
Rozanov, A.
Wang, A.
Wermes, N.
[J]. JOURNAL OF INSTRUMENTATION, 2016, 11
[8] Wang T., 2016, TWEPP 2016 TOP WORKS

← 1 →