Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells

被引：40

作者：

Poltavtsev, S. V. ^{[1
]}

Efimov, Yu. P. ^{[2
]}

Dolgikh, Yu. K. ^{[2
]}

Eliseev, S. A. ^{[2
]}

Petrov, V. V. ^{[2
]}

Ovsyankin, V. V. ^{[2
]}

机构：

[1] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia

[2] St Petersburg State Univ, Dept Phys, St Petersburg 198504, Russia

来源：

SOLID STATE COMMUNICATIONS | 2014年 / 199卷

关键词：

Single; (In; Ga)As QW; MQW Bragg structures; Inhomogeneous broadening; Brewster angle; SEMICONDUCTOR NANOSTRUCTURES; OPTICAL SPECTROSCOPY; OSCILLATOR-STRENGTH; GAAS; REFLECTION; BRAGG;

D O I：

10.1016/j.ssc.2014.09.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study radiative linewidth of exciton resonance in shallow InxGa1-xAs/GaAs single quantum wells as a function of indium concentration in the range x = 0.02...0.10 and well thickness in the range L-z = 1...30 nm using method of Brewster reflection spectroscopy. Record linewidths of heavy-hole exciton resonance of about 130...180 mu eV are measured in reflection spectra for single quantum wells with L-z = 2 nm and x=0.02 at temperature of 9 K. In these spectra, the non-radiative linewidth including inhomogeneous broadening can be comparable or even less than radiative linewidth. It is shown that radiative linewidth weakly depends on x and L-z in these ranges. In multiple-quantum-well Bragg structure with ten periods, the oscillator strength per individual quantum well is similar to that of single quantum well, while the total radiative linewidth exceeds inhomogeneous broadening by 4 times. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：47 / 51

页数：5

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