Silicon Surface with Giant Spin Splitting

被引：193

作者：

Gierz, I. ^{[1
]}

Suzuki, T. ^{[1
]}

Frantzeskakis, E. ^{[2
]}

Pons, S. ^{[2
,3
]}

Ostanin, S. ^{[4
]}

Ernst, A. ^{[4
]}

Henk, J. ^{[4
]}

Grioni, M. ^{[2
]}

Kern, K. ^{[1
,2
]}

Ast, C. R. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland

[3] Nancy Univ, CNRS, Inst Jean Lamour, Dept Phys Mat & Mat, F-54506 Vandoeuvre Les Nancy, France

[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Saale, Germany

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 04期

关键词：

2; PHASES; SI(111); BI;

D O I：

10.1103/PhysRevLett.103.046803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate a giant Rashba-type spin splitting on a semiconducting substrate by means of a Bi-trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken inducing a giant spin splitting with a Rashba energy of about 140 meV, much larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations.

引用

页数：4

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