Two-layer responsivity modelling of HgCdTe photoconductive detectors

被引：0

作者：

Bhan, RK ^{[1
]}

Dhar, V ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

OPTO-ELECTRONICS REVIEW | 2004年 / 12卷 / 02期

关键词：

HgCdTe photoconductive detectors; two-layer responsity model; shunt resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a simple two-layer responsivity model of n-HgCdTe photoconductive detectors by including the contribution of shunt resistance arising due to the accumulation layer at the surface. It is shown that in general responsivity of a proper two-layer model is higher than quasi two-layer model that is reponed in literature and used by many workers.

引用

页码：213 / 219

页数：7

共 9 条

[1]

BROUDY RM, 1981, SEMICONDUCT SEMIMET, V18, P157

[2]

DERENIAK EL, 1984, OPTICAL RAD DETECTOR, pCH4

[3] Quasi-2D analysis of the effect of passivant on the performance of long-wavelength infrared HgCdTe photodiodes [J].