GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth

被引：16

作者：

Chang, Y. H. ^{[2
]}

Chiu, H. C. ^{[2
]}

Chang, W. H. ^{[2
]}

Kwo, J. ^{[1
]}

Tsai, C. C. ^{[3
]}

Hong, J. M. ^{[3
]}

Hong, M. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] HUGA Optotech Inc, Taichung 400, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Atomic layer deposition (ALD); Molecular beam epitaxy (MBE); Al2O3; GaN; High kappa dielectrics; FIELD-EFFECT TRANSISTORS; SURFACES;

D O I：

10.1016/j.jcrysgro.2008.11.011

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The interfacial chemical characteristics and electrical properties of the metal-oxide-semiconductor (MOS) diode using molecular beam epitaxy (MBE)-Al2O3 as a dielectric template followed by atomic layer deposited (ALD) Al2O3 on hydrochloric acid (HCl) solution-cleaned GaN were studied and correlated. The results are Compared with those using ALD-Al2O3 as the dielectrics. With in situ X-ray photoelectron spectroscopy (XPS) analyses, a significant amount of residual Cl on the HCl-cleaned GaN surface was detected. The residual Cl was reduced by annealing at 300 and 670 degrees C, two temperatures for ALD and MBE-Al2O3 growth, respectively, with the amount being further reduced by the 670 degrees C annealing. The electrical characteristics were consistent with the XPS analyses; well-behaved capacitance-voltage (C-V) characteristics were obtained in the MBE-template sample, while appearance of a bump in the C-V curves was observed in the ALD-sample without the MBE template. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2084 / 2086

页数：3

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