Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals

被引:5
作者
Martovitsky, V. P. [1 ]
机构
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
关键词
D O I
10.1134/S1063776106060094
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanum-doped Bi2201 single crystals with x = 0.7 and T-c = 8-10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q(1) = 0.237b* + 0.277c* and q(2) = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70- to 80-angstrom-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T-c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T-c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions.
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页码:958 / 965
页数:8
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