Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures

被引：0

作者：

Baig, J. ^{[1
]}

Roycroft, B. ^{[1
]}

O'Callaghan, J. ^{[1
]}

Robert, C. ^{[1
]}

Ye, N. ^{[1
]}

Gleeson, M. ^{[1
]}

Gocalinska, A. ^{[1
]}

Pelucchi, E. ^{[1
]}

Townsend, P. ^{[1
]}

Corbett, B. ^{[1
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum well intermixing in 2 mu m emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.

引用

页数：2

共 3 条

[1]

Ooi BS, 1997, IEEE J QUANTUM ELECT, V33, P1784, DOI 10.1109/3.631284

[2]

Poletti F, 2013, NAT PHOTONICS, V7, P279, DOI [10.1038/NPHOTON.2013.45, 10.1038/nphoton.2013.45]

[3] A single regrowth integration platform for photonic circuits incorporating tunable SGDBR lasers and quantum-well EAMs [J].

Sysak, Matthew N. ;

Raring, James W. ;

Barton, Jonathon S. ;

Dummer, Matthew ;

Blumenthal, Daniel J. ;

Coldren, Larry A. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (13-16) :1630-1632

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