Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices

被引：43

作者：

Hase, Muneaki ^{[1
,2
]}

Miyamoto, Yoshinobu ^{[1
]}

Tominaga, Junji ^{[3
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 17期

关键词：

amorphous semiconductors; annealing; antimony compounds; germanium compounds; high-speed optical techniques; phonon-defect interactions; semiconductor superlattices; III-V SEMICONDUCTORS; PHASE-CHANGE; RAMAN-SCATTERING; THIN-FILMS; DYNAMICS; DEFECTS; MEMORY; GETE;

D O I：

10.1103/PhysRevB.79.174112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Femtosecond dynamics of coherent optical phonons in GeTe/Sb2Te3 superlattices (SLs), a new class of semiconductor SLs with three different states, have been investigated by using a reflection-type pump-probe technique at various lattice temperatures. The time-resolved transient reflectivity obtained in as-grown SLs exhibits the coherent A(1) optical modes at 5.10 and 3.78 THz while only the single A(1) mode at 3.68 THz is observed in annealed SLs. The decay rate of the A(1) mode in annealed SLs is strongly temperature dependent while that in as-grown SLs is not temperature dependent. This result indicates that the damping of the coherent A(1) phonons in amorphous SLs is governed by the phonon-defect (vacancy) scattering rather than the anharmonic phonon-phonon coupling.

引用

页数：5

共 31 条

[1] Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials [J].

Andrikopoulos, K. S. ;

Yannopoulos, S. N. ;

Kolobov, A. V. ;

Fons, P. ;

Tominaga, J. .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) :1074-1078

[2] Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5 [J].

Baker, DA ;

Paesler, MA ;

Lucovsky, G ;

Agarwal, SC ;

Taylor, PC .

PHYSICAL REVIEW LETTERS, 2006, 96 (25)

[3]

Cardona M., 1984, LIGHT SCATTERING SOL

[4] Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].

Cavalleri, A ;

Dekorsy, T ;

Chong, HHW ;

Kieffer, JC ;

Schoenlein, RW .

PHYSICAL REVIEW B, 2004, 70 (16) :1-4

[5] Temperature-dependent Raman scattering in PT and PMN-PT thin films [J].

ChingPrado, E ;

Cordero, J ;

Katiyar, RS ;

Bhalla, AS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :762-767

[6] Crystalline amorphous semiconductor superlattice [J].

Chong, T. C. ;

Shi, L. P. ;

Wei, X. Q. ;

Zhao, R. ;

Lee, H. K. ;

Yang, P. ;

Du, A. Y. .

PHYSICAL REVIEW LETTERS, 2008, 100 (13)

[7] Insights into the structure of the stable and metastable (GeTe)m(Sb2Te3)n compounds [J].

Da Silva, Juarez L. F. ;

Walsh, Aron ;

Lee, Hosun .

PHYSICAL REVIEW B, 2008, 78 (22)

[8] Anharmonic effects in the phonons of III-V semiconductors: first principles calculations [J].

Debernardi, A .

SOLID STATE COMMUNICATIONS, 1999, 113 (01) :1-10

[9] Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy [J].

Först, M ;

Dekorsy, T ;

Trappe, C ;

Laurenzis, M ;

Kurz, H ;

Béchevet, B .

APPLIED PHYSICS LETTERS, 2000, 77 (13) :1964-1966

[10] Femtosecond spectroscopy of defect modes in silica glasses -: art. no. 081909 [J].

Guillon, C ;

Burgin, J ;

Langot, P ;

Vallée, F ;

Hehlen, B .

APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3

← 1 2 3 4 →