In situ gravimetric monitoring of surface reactions between sapphire and NH3

被引:6
作者
Akiyama, Kazuhiro [1 ]
Ishii, Yasuhiro [1 ]
Murakami, Hisashi [2 ]
Kumagai, Yoshinao [2 ]
Koukitu, Akinori [2 ]
机构
[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Grad Sch Engn, Koganei, Tokyo 1848588, Japan
[2] Tokyo Univ Agr & Technol, Inst Symbiot Sci & Technol, Koganei, Tokyo 1848588, Japan
关键词
Surface processes; Morphological stability; Vapor-phase epitaxy; Nitrides; Sapphire; Semiconducting aluminum compounds; HIGH-TEMPERATURE GROWTH; C-PLANE SAPPHIRE; EPITAXIAL-GROWTH; DECOMPOSITION RATE; ALN LAYERS; NITRIDATION; FILM;
D O I
10.1016/j.jcrysgro.2009.01.079
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Surface reactions between a (0 0 0 1) C-plane sapphire and NH3, with He as an inert carrier gas, were investigated at high temperatures over 1200 degrees C using the in situ gravimetric monitoring method. Although the sapphire substrate was stable up to 1400 degrees C under a He atmosphere, decomposition started to occur at 1300 degrees C under a 0.1 arm NH3+He and the decomposition rates were found to be lower than those in 0.1 atm H-2+He at each temperature. These results imply that sapphire can be decomposed by NH3 and/or hydrogen generated by the decomposition of NH3 over 1300 degrees C. The decomposition rate in NH3+He was decreased with increase in NH3 flow time, and the decomposition rate became constant after 60 min of NH3 flow. Moreover, the activation energy for sapphire decomposition before 60 min of NH3 flow was different from that after 60min of NH3 flow time, which indicates that the surface reaction between sapphire and NH3 and/or hydrogen generated from NH3 changes depending on the time of NH3 flow. The dependence of the surface reactions and rate-limiting reactions between sapphire and NH3 on the time of NH3 flow is discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3110 / 3113
页数:4
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