High-power microwave semiconductor commutator

被引：0

作者：

Razinkin, VP ^{[1
]}

Rubanovich, MG ^{[1
]}

Fadeeva, LV ^{[1
]}

Belotelov, VV ^{[1
]}

机构：

[1] Novosibirsk State Tech Univ, Novosibirsk, Russia

来源：

MICROWAVE ELECTRONICS: MEASUREMENTS, IDENTIFICATION, APPLICATIONS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the method of synthesis of the high-power microwave semiconductor commutator is considered. By means of the commutator, the iterative procedure considering the dissipative losses in the matching elements and in semiconductor diodes is developed. The offered method of synthesis ensures a minimum magnitude of direct losses in a wide band of frequencies at high quality of the matching.

引用

页码：49 / 51

页数：3

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