High-power microwave semiconductor commutator

被引：0

作者：

Razinkin, VP ^{[1
]}

Rubanovich, MG ^{[1
]}

Fadeeva, LV ^{[1
]}

Belotelov, VV ^{[1
]}

机构：

[1] Novosibirsk State Tech Univ, Novosibirsk, Russia

来源：

MICROWAVE ELECTRONICS: MEASUREMENTS, IDENTIFICATION, APPLICATIONS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the method of synthesis of the high-power microwave semiconductor commutator is considered. By means of the commutator, the iterative procedure considering the dissipative losses in the matching elements and in semiconductor diodes is developed. The offered method of synthesis ensures a minimum magnitude of direct losses in a wide band of frequencies at high quality of the matching.

引用

页码：49 / 51

页数：3

共 50 条

[1] High-power microwave semiconductor controlling devices
Razinkin, VP
Matvejev, SJ
Rubanovitch, MG
Khrustalev, VA
2001 MICROWAVE ELECTRONICS: MEASUREMENTS, IDENTIFICATION, APPLICATION, CONFERENCE PROCEEDINGS, 2001, : 26 - 29
[2] HIGH-POWER THYRISTOR PULSE COMMUTATOR
GUBANOV, VV
EPECHURIN, VP
PETROV, VM
REZVYAKOV, NA
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1986, 29 (01) : 140 - 141
[3] Technological high-power microwave pulse protection of semiconductor structures
Stryukov, BA
Lenchuk, SI
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2000, 45 (09) : 1026 - 1030
[4] Degradation kinetics of semiconductor structures affected by high-power microwave pulses
Stryukov, BA
Lenchuk, SI
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2000, 45 (07) : 803 - 807
[5] HIGH-POWER MICROWAVE GENERATION USING OPTICALLY ACTIVATED SEMICONDUCTOR SWITCHES
NUNNALLY, WC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) : 2439 - 2448
[6] Internal Field Analysis of High-Power Microwave in Impurities Semiconductor Materials
Guo Jierong
Cai Xinhua
Wang Xianchun
2009 5TH INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS, NETWORKING AND MOBILE COMPUTING, VOLS 1-8, 2009, : 2154 - 2157
[7] The Main Damage Characteristics of Semiconductor Devices Under High-Power Microwave
Chen, Kaibai
COMMUNICATIONS, SIGNAL PROCESSING, AND SYSTEMS, CSPS 2018, VOL III: SYSTEMS, 2020, 517 : 558 - 563
[8] CONTROL OF HIGH-POWER SEMICONDUCTOR SWITCHES BY MICROWAVE RADIATION - 1.
Grekhov, I.V.
Kardo-Sysoev, A.F.
Kriklenko, A.V.
Soviet physics. Semiconductors, 1982, 16 (09): : 1006 - 1010
[9] COMMUTATOR FOR HIGH-POWER RADIO-FREQUENCY PULSES
PETROV, BI
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1987, 30 (03) : 616 - 617
[10] HIGH-POWER SEMICONDUCTOR DEVICES
GENTRY, FE
YORK, RA
IEEE SPECTRUM, 1965, 2 (03) : 49 - &

← 1 2 3 4 5 →