Novel thin window design for a large-area silicon strip detector

被引：56

作者：

Tengblad, O

Bergmann, UC

Fraile, LM

Fynbo, HOU

Walsh, S

机构：

[1] CSIC, Inst Estructura Mat, E-28006 Madrid, Spain

[2] CERN, ISOLDE, CH-1211 Geneva 23, Switzerland

[3] Univ Complutense Madrid, Dipartimento Fis Atom Mol & Nucl, E-28040 Madrid, Spain

[4] Aarhus Univ, Inst Fys & Astron, DK-8000 Aarhus C, Denmark

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 525卷 / 03期

关键词：

large-area segmented detectors; charged-particle spectroscopy; dead layer effects; thin window; double-sided silicon strip detectors;

D O I：

10.1016/j.nima.2004.01.082

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A novel design to achieve a ultra-thin dead layer for large-area Si strip detectors is presented. The traditional contact layer making up the strip is here replaced by a grid covering only 2% of the strip area. The dead layer is thus (over 98% of the active surface) reduced to become the implantation depth only. Furthermore, the implantation depth has been reduced from 400 to 100 nm. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：458 / 464

页数：7

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