SiGe EAM-Based Transceivers for Datacenter Interconnects and Radio Over Fiber

被引:3
作者
Bogaert, Laurens [1 ]
Van Kerrebrouck, Joris [2 ]
Breyne, Laurens [1 ,2 ]
Lambrecht, Joris [2 ]
Li, Haolin [2 ]
Van Gasse, Kasper [1 ]
Verbist, Jochem [3 ]
Vanhoecke, Michael [2 ]
Ramon, Hannes [2 ]
Srinivasan, Srinivasan Ashwyn [4 ]
De Heyn, Peter [4 ]
Van Campenhout, Joris [4 ]
Ossieur, Peter [2 ]
Demeester, Piet [2 ]
Yin, Xin [2 ]
Bauwelinck, Johan [2 ]
Torfs, Guy [2 ]
Roelkens, Gunther [1 ]
机构
[1] Ghent Univ IMEC, Dept Informat Technol INTEC, Photon Res Grp, B-9052 Ghent, Belgium
[2] Ghent Univ IMEC, Dept Informat Technol INTEC, IDLab, B-9052 Ghent, Belgium
[3] BiFAST, B-9000 Ghent, Belgium
[4] IMEC, B-3001 Leuven, Belgium
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
Optical transmitters; Optical fibers; Integrated optics; Optical modulation; Optical device fabrication; Data center interconnects (DCI); electro-absorption modulator (EAM); integrated optoelectronics; radio-over-fiber (RoF); silicon photonics (SiPh); SILICON PHOTONICS; OOK;
D O I
10.1109/JSTQE.2020.3027046
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon photonics is a key-enabling technology leveraging decades of effort and infrastructure of the microelectronics CMOS industry resulting in high yield, low cost and potential high volume manufacturing. Furthermore, due to the high index contrast of the platform, very compact, high-complexity photonic integrated circuits can be devised. To benefit from these advantages, high-speed modulators should also be compatible with silicon technology. In this respect, SiGe electro-absorption modulators (EAM) are considered as a promising candidate since they are CMOS-compatible and offer high-speed, compact, low-loss and low-power modulation. In this paper, we discuss SiGe EAM-based transceivers for next-generation datacenter interconnects (DCI) and radio-over-fiber (RoF) fronthaul in next-generation cellular networks.
引用
收藏
页数:13
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