Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

被引：25

作者：

Zhao, Simeng E. ^{[1
]}

Bonaldo, Stefano ^{[2
]}

Wang, Pan ^{[1
]}

Jiang, Rong ^{[1
]}

Gong, Huiqi ^{[1
]}

Zhang, En Xia ^{[1
]}

Waldron, Niamh ^{[3
]}

Kunert, Bernardette ^{[3
]}

Mitard, Jerome ^{[3
]}

Collaert, Nadine ^{[3
]}

Sioncke, Sonja ^{[3
]}

Linten, Dimitri ^{[3
]}

Schrimpf, Ronald D. ^{[1
]}

Reed, Robert A. ^{[1
]}

Gerardin, Simone ^{[2
]}

Paccagnella, Alessandro ^{[2
]}

Fleetwood, Daniel M. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Univ Padua, Dept Informat Engn, I-35122 Padua, Italy

[3] IMEC, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 07期

关键词：

1/f noise; III-V; border trap; bulk Si; FinFETs; gate-length dependence; InGaAs; total ionizing dose (TID); LOW-FREQUENCY NOISE; 1/F NOISE; III-V; TEMPERATURE-DEPENDENCE; INTERFACE TRAPS; BORDER TRAPS; MOS; GE; DEFECTS; DEVICES;

D O I：

10.1109/TNS.2019.2890827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at VG = -1 V. Radiation-induced trapped positive charge dominates the TID response of InGaAs FinFET transistors, consistent with previous results for InGaAs multifin capacitors. Shorter gate-length devices show larger radiation-induced charge trapping than longer gate-length devices, most likely due to the electrostatic effects of trapped charge in the surrounding SiO2 isolation and SiO2/Si3N4 spacer oxides. The 1/f noise measurements indicate a high trap density and a nonuniform defect-energy distribution, consistent with a strong variation of effective border-trap density with surface potential.

引用

页码：1599 / 1605

页数：7

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