共 26 条
Enhanced performance of light-controlled conductive switching in hybrid cuprous oxide/reduced graphene oxide (Cu2O/rGO) nanocomposites
被引:561
作者:

Wei, Jing
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Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

Zang, Zhigang
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Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

Zhang, Yubo
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机构:
Univ Texas El Paso, Dept Phys, El Paso, TX 79902 USA Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

Wang, Ming
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Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

Du, Jihe
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Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

Tang, Xiaosheng
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Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China
机构:
[1] Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China
[2] Univ Texas El Paso, Dept Phys, El Paso, TX 79902 USA
基金:
中国国家自然科学基金;
关键词:
RADICAL OXIDATION;
LOW-TEMPERATURE;
FILMS;
FABRICATION;
D O I:
10.1364/OL.42.000911
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
A significant enhancement of photoresponse from the lightcontrolled conductive switching based on Cu2O/rGO nanocomposites was experimentally demonstrated. Cu2O/rGO nanocomposites were synthesized via a facile wet-reduced method. The crystalline structure, morphologies, and photoluminescence of the Cu2O/rGO nanocomposites were characterized and analyzed. The fabricated conductive switching was measured under the irradiation of a continuous laser. When the laser was turned on and off alternately, the photoconductive switching obviously displayed a state conversion between "on" and "off" reversibly. Furthermore, the typical current-voltage (I-V) and current-time (I-t) curves exhibited a relatively high switching ratio (I-on/I-off) of 3.25 and a fast response time of 0.45 s. The excellent "on-off" characteristics of the device show promising applications in memory storage and logic circuits. (C) 2017 Optical Society of America
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页码:911 / 914
页数:4
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