Symmetrically linearised charge-sheet model for extended temperature range

被引：2
|
作者：
Zhu, Z. [1 ]
Gildenblat, G. [1 ]
机构：
[1] Arizona State Univ, Ira A Fulton Sch Engn Elect Engn, Tempe, AZ 85281 USA
来源：
ELECTRONICS LETTERS | 2009年 / 45卷 / 07期
关键词：
D O I：
10.1049/el.2009.3655
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The symmetrically linearised charge-sheet model, which forms the core of the industry standard compact MOSFET model is extended to a wide temperature range by including partial impurity freeze-out. The new model is verified by comparison with the exact results and includes the original formulation as a special case corresponding to complete impurity ionisation.
引用
收藏
页码：346 / 347
页数：2
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