DC current induced second order optical nonlinearity in graphene

被引：72

作者：

Cheng, J. L. ^{[1
,2
,3
]}

Vermeulen, N. ^{[1
]}

Sipe, J. E. ^{[2
,3
]}

机构：

[1] Vrije Univ Brussel, Dept Appl Phys & Photon IR TONA, Brussels Photon Team B PHOT, B-1050 Brussels, Belgium

[2] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[3] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, Canada

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 13期

基金：

加拿大自然科学与工程研究理事会;

关键词：

2ND-HARMONIC GENERATION; BILAYER GRAPHENE; SEMICONDUCTORS; OPTOELECTRONICS; MODULATION; TRANSPORT;

D O I：

10.1364/OE.22.015868

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We calculate the dc current induced second harmonic generation in doped graphene using the semiconductor Bloch equations under relaxation time approximations. We find that the maximum value of the effective second order susceptibility appears when the fundamental photon energy matches the chemical potential. For a surface current density 1.1 x 10(3) A/m and a relaxation time at optical frequencies of 13 fs, the effective second order susceptibility chi((2);xxx)(eff) can be as large as 10(-7)m/V for h omega = 0.2 eV or 10(-8) m/V for h omega = 0.53 eV. (C) 2014 Optical Society of America

引用

页码：15868 / 15876

页数：9

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