Nanoscale electrical characterization of 3C-SiC layers by conductive atomic force microscopy

被引：1

作者：

Yahata, A ^{[1
]}

Zhang, L ^{[1
]}

Shinohe, T ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv Discrete Semicond Technol Lab, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

3C-SiC; conductive atomic force microscopy; Schottky barrier diodes; twin boundaries; undulation;

D O I：

10.4028/www.scientific.net/MSF.389-393.667

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Macro- and micro-regional electric characteristics of 3C-SiC layers grown on undulated Si substrates have been measured to investigate the applicability to a power device material. It has been found that there were extremely small regions exhibiting strong conductivity and that ideal Schottky characteristics were not obtained although a Schottky structure was fabricated. Those regions corresponded to some parts of twin boundaries (TBs) or the locations with a large layer thickness difference.

引用

页码：667 / 670

页数：4

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