Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states

被引：11

作者：

Ghosh, Joydeep ^{[1
]}

Ganguly, Swaroop ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 08期

关键词：

2-DIMENSIONAL ELECTRON-GAS; LOW-FREQUENCY NOISE; CURRENT COLLAPSE; MOBILITY; TRANSISTORS; INTERFACE; MECHANISM; HEMTS;

D O I：

10.7567/JJAP.57.080305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytical modeling framework is presented for the two-dimensional electron gas (2DEG) density and bare surface barrier height in AlGaN/InGaN/GaN double heterostructures, which use an InGaN layer as the conducting channel. The 2DEG formed at the AlGaN/InGaN hetero-interface originates from the surface donor states on the AlGaN surface. The model is derived by the electrostatic analysis of different material interfaces. Numerical simulations are performed to determine the effect of a thick channel (InGaN layer). The presented results agree with the published experimental results, and they can easily be used for the advanced design and characterization of AlGaN/InGaN/GaN-based heterostructures. (C) 2018 The Japan Society of Applied Physics

引用

页数：5

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