Highly spin-polarized tunneling in fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier

被引：5
作者：
Marukame, T. [1 ]
Ishikawa, T. [1 ]
Sekine, W. [1 ]
Matsuda, K. [1 ]
Uemura, T. [1 ]
Yamamoto, M. [1 ]
机构：
[1] Hokkaido Univ, Div Elect Informat, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2006年 / 42卷 / 10期
关键词：
Co-based full Hensler alloy; half-metallic ferromagnet; magnetic tunnel junction; tunnel magnetoresistance;
D O I：
10.1109/TMAG.2006.878859
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Highly spin-polarized tunneling with tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K was demonstrated for fully epitaxial magnetic tunnel junctions fabricated using a cobalt-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film having a composition close to the stoichiometric one and a MgO tunnel barrier. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios. This adds to the promise of the fully epitaxial MTJ as a key device structure for utilizing the intrinsically high spin polarizations of Co-based full-Heusler alloy thin films.
引用
收藏
页码：2652 / 2654
页数：3
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