Wear-out and breakdown of ultra-thin gate oxides after irradiation

被引：10
|
作者：
Cester, A
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, I-35131 Padua, Italy
[2] INFM, Unita Padova, I-35131 Padua, Italy
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 19期
关键词：
D O I：
10.1049/el:20020757
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The enhancement of gate leakage current after exposure to ionising radiation is generally believed to be the major challenge for devices and circuits operating in harsh radiation environments. How ultra-thin gate oxides subjected to heavy ion irradiation react to a subsequent electrical stress performed at low voltages has been investigated. Even in devices exhibiting small (or even negligible) enhancement of the leakage current, the time-to-breakdown is substantially reduced in comparison with unirradiated samples due to the onset of a soft or hard breakdown, in contrast with previous results found on thicker oxides.
引用
收藏
页码：1137 / 1139
页数：3
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