Friction and Dissipation in Epitaxial Graphene Films

被引：528

作者：

Filleter, T. ^{[1
]}

McChesney, J. L. ^{[2
]}

Bostwick, A. ^{[2
]}

Rotenberg, E. ^{[2
]}

Emtsev, K. V.

Seyller, Th. ^{[3
]}

Horn, K. ^{[3
,4
]}

Bennewitz, R. ^{[1
,5
]}

机构：

[1] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[3] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

[4] Max Planck Gesell, Fritz Haber Inst, Dept Mol Phys, D-14195 Berlin, Germany

[5] Leibniz Inst New Mat, INM, D-66123 Saarbrucken, Germany

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.102.086102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied friction and dissipation in single and bilayer graphene films grown epitaxially on SiC. The friction on SiC is greatly reduced by a single layer of graphene and reduced by another factor of 2 on bilayer graphene. The friction contrast between single and bilayer graphene arises from a dramatic difference in electron-phonon coupling, which we discovered by means of angle-resolved photoemission spectroscopy. Bilayer graphene as a lubricant outperforms even graphite due to reduced adhesion.

引用

页数：4

共 23 条

[1] Electronic confinement and coherence in patterned epitaxial graphene [J].