High Performance Inverter with a-IGZO-based Resistor Load and Self-Aligned Coplanar a-IGZO Driving TFT

被引：0

作者：

Geng, Di ^{[1
]}

Kang, Dong Han ^{[1
]}

Seok, Man Ju ^{[1
]}

Mativenga, Mallory ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, 1 Hoegi Dong, Seoul 130701, South Korea

来源：

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2 | 2012年 / 19卷

关键词：

A-IGZO TFT; Coplanar; self-aligned process; a-IGZO-based resistor; Inverter; THIN-FILM-TRANSISTOR; AMORPHOUS OXIDE SEMICONDUCTORS; TRANSPARENT; DISPLAY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an inverter implemented with a coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) driving thin-film transistor (TFT) and an a-IGZO-based resistor load. The inverter has larger voltage gain and wider swing range compared to inverters employing enhancement mode TFTs as load, making it applicable to high speed logic gates and other simple circuits.

引用

页码：879 / 881

页数：3

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