Surface and bulk conductivity of vanadium dioxide

被引：6

作者：

Tutov, E. A. ^{[1
]}

Manannikov, A. V. ^{[1
]}

Al-Khafaji, H. I. ^{[2
]}

Zlomanov, V. P. ^{[3
]}

机构：

[1] Voronezh State Univ Architecture & Civil Engn, Voronezh 394006, Russia

[2] Al Nahrain Univ, Coll Engn, Baghdad, Iraq

[3] Moscow MV Lomonosov State Univ, Moscow 119991, Russia

来源：

TECHNICAL PHYSICS | 2017年 / 62卷 / 03期

关键词：

SEMICONDUCTOR PHASE-TRANSITION; MOTT TRANSITION; THIN-FILMS;

D O I：

10.1134/S1063784217030252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dc and ac resistances of a TR-68 thermistor based on the vanadium dioxide film have been measured and the temperature dependence of the resistance in the semiconductor-metal transition region under adsorption has been studied. The energy band model has been proposed, which explains the anomalous response to adsorption of donor gases by the inversion of the conductivity type of vanadium dioxide surface layers.

引用

页码：390 / 394

页数：5

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