High-directivity photonic emitter using 6 module integrated with HEMT amplifier for 10-Gbit/s wireless link

被引：33

作者：

Hirata, A ^{[1
]}

Kosugi, T ^{[1
]}

Meisl, N ^{[1
]}

Shibata, T ^{[1
]}

Nagasuma, T ^{[1
]}

机构：

[1] NTT Corp, Microsyst Integrat Labs, Kanagawa 2430198, Japan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2004年 / 52卷 / 08期

关键词：

broad-band communication; high electron-mobility transistor (HEMT); millimeter-wave (MMW) radio communication; photodiodes (PDs);

D O I：

10.1109/TMTT.2004.831581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a high-directivity photonic emitter with a high-gain antenna and waveguide-output photodiode module (WG-PM) for extending the transmission distance of a wireless link that uses a 120-GHz millimeter wave. The module employs a uni-traveling-carrier photodiode, broad-band high electron-mobility transistor (HEMT) amplifier, and planar-circuit-to-waveguide transition substrate. The maximum output power of the WG-PM is 8 dBm at a frequency of 120 GHz, and it has a 3-dB bandwidth of over 16 GHz. The wireless link with the high-directivity photonic emitter achieved 10-Gbit/s wireless data transmission, and using a high-gain Gaussian optic lens antenna and an HEMT amplifier reduced the input optical power necessary for error-free transmission. The transmission characteristics of the link showed that its transmission distance can be extended to over 100 m.

引用

页码：1843 / 1850

页数：8

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