Modeling a radio-frequency single-electron-transistor scanning probe

被引：2

作者：

Lu, Li ^{[1
,2
]}

Su, Lina ^{[3
]}

Sun, Jiandong ^{[1
]}

Li, Xinxing ^{[1
]}

Qin, Hua ^{[1
]}

Ji, Zhongqing ^{[4
]}

Blick, Robert H. ^{[5
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] Jiangnan Univ, Dept Elect Engn, Minist Educ, Key Lab Adv Proc Control Light Ind, Wuxi 214122, Jiangsu, Peoples R China

[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[5] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 08期

基金：

中国国家自然科学基金;

关键词：

QUANTUM-DOT; NOISE; LIMIT; MICROSCOPY;

D O I：

10.7567/JJAP.53.085001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-electron transistors (SETs) are ultra-sensitive charge sensors. Aiming to develop a radio-frequency single-electron-transistor (RF-SET) scanning probe system, we build a complete device/circuit model to evaluate the charge sensitivity and the spatial resolution. Simulations of a gedunken experiment in which a silicon RF-SET probe scans a nanowire device suggest a charge sensitivity in the order of 10(-5)-10(-3) e/Hz(1/2) and a spatial resolution better than 100 nm. The dynamic range and the linearity of the scanning probe are also discussed. The model would provide a quantitative interpretation for future real imaging experiment and an operation guidance for a realistic RF-SET scanning probe system. (C) 2014 The Japan Society of Applied Physics

引用

页数：6

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