High-Speed Modulation of Index-Guided Implant-Confined Vertical-Cavity Surface-Emitting Lasers

被引：20

作者：

Chen, Chen ^{[1
]}

Leisher, Paul O. ^{[2
]}

Kuchta, Daniel M. ^{[3
]}

Choquette, Kent D. ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] nLight Corp, Vancouver, WA 98665 USA

[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期

关键词：

High-speed modulation; semiconductor laser; vertical-cavity surface-emitting laser (VCSEL); VCSELS; PERFORMANCE; BANDWIDTH; NOISE;

D O I：

10.1109/JSTQE.2009.2016115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An etched photonic crystal (PhC) or holey wedge structure induces index confinement into 850-nm implant-confined vertical-cavity surface-emitting lasers (VCSELs) to engineer the spatial overlap between the optical mode and laser gain for improved high-speed operation and reduced relative intensity noise. Large-signal operation of 12.5 Gb/s is achieved with a single transverse-mode PhC VCSEL and 15 Gb/s with a single transverse-mode holey VCSEL. An excessive current diffusion effect is found when the difference between the electrical and optical diameter is large (> 4 mu m), which limits the large-signal modulation of single-mode VCSELs. The design rules for optimal single transverse-mode high-speed PhC and holey VCSELs are extracted from a parametric study of their large-signal modulation characteristics.

引用

页码：673 / 678

页数：6

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