Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

被引：5

作者：

Fu, Kai ^{[1
]}

Qi, Xin ^{[1
]}

Fu, Houqiang ^{[2
]}

Su, Po-Yi ^{[3
]}

Liu, Hanxiao ^{[3
]}

Yang, Tsung-Han ^{[1
]}

Yang, Chen ^{[1
]}

Montes, Jossue ^{[1
]}

Zhou, Jingan ^{[1
]}

Ponce, Fernando A. ^{[3
]}

Zhao, Yuji ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2021年 / 36卷 / 01期

关键词：

gallium nitride; regrow; interface; p-GaN; growth rate; SELECTIVE-AREA GROWTH; OHMIC CONTACTS; DOPED GAN; N DIODES; TRANSISTORS; HEMTS; MBE;

D O I：

10.1088/1361-6641/abc7d1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

p-type gallium nitride (GaN) layers were regrown on etched surfaces on free-standing GaN substrates by metalorganic chemical vapor deposition with different growth rates by adjusting trimethylgallium flow rates. The roughness of the samples increases almost linearly with the growth rate, with an increase rate of 0.6 nm (mu m h(-1)) (-1). The screw dislocation density of the samples increases significantly when the growth rate is higher than 0.5 mu m h(-)(1). When the magnesium (Mg) doping concentration is higher than 7.0 x 10(19) cm(-3), transmission electron microscopy images clearly show the regrowth interfaces, and Mg precipitate occur in high-doping p-GaN layers. Under the same bis(cyclopentadienyl)magnesium (Cp2Mg) flow rate, the Mg doping concentration decreases with the growth rate. The samples with different growth rates show different electroluminescence spectra. The emission peak at 2.8 eV is due to the transition from the deep donor level to the Mg acceptor level. And the intensity of this peak drops with increasing growth rate due to reduction of Mg acceptors. Transitions related to defect levels appears with increasing growth rate due to an increased screw dislocation density.

引用

页数：6

共 35 条

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