Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors

被引：44

作者：

Chang, KC ^{[1
]}

Porter, LM

Bentley, J

Lu, CY

Cooper, J

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 12期

关键词：

D O I：

10.1063/1.1737801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study we investigated the morphology and interfacial chemistry of (0001) 4H-SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) as a function of post-oxidation annealing in nitric oxide (NO) following wet oxidation. Energy-filtered transmission electron microscopy analyses showed enhanced C/Si concentrations (up to 13%) at distinct locations along the SiO2/SiC interface in the MOSFETs that were not annealed in NO. In contrast, regions of enhanced C/Si concentration were not detected in the MOSFETs that were annealed in NO; instead, these samples showed a trace amount of interfacial N. The introduction of N may therefore be associated with a reduction of C in these samples and may contribute to the higher channel mobility (similar to38 cm(2)/V s) in the samples annealed in NO relative to the samples that were not annealed in NO (similar to9 cm(2)/V s). Rough SiO2/4H-SiC interfaces and nonuniform oxide thickness were observed on both the NO- and the non-NO-annealed samples. The rough interfaces shown in the transmission electron microscopy bright field images may also be an important factor limiting the channel mobility in SiC-based MOSFETs. (C) 2004 American Institute of Physics.

引用

页码：8252 / 8257

页数：6

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